会社ブログについて Mingjiada Electronics Supply Genuine, In-Stock Infineon GaN (CoolGaN™) and SiC (CoolSiC™) MOSFETs, Enabling Efficient Upgrades for Server Power Supplies

The continuous rise in AI computing density is pushing server power supplies (PSUs) into a power range that silicon devices struggle to handle. With per-rack power consumption approaching 300 kW, 80 PLUS Titanium has become the entry requirement for high-end PSUs, and the industry is now evolving toward Ruby-level efficiency. Against this backdrop, Infineon’s CoolSiC™ silicon carbide MOSFETs and CoolGaN™ gallium nitride transistors form the core component combination for server power supply upgrades, addressing the “high-voltage, high-power” and “high-frequency, high-density” requirements, respectively. As an authorized independent distributor of electronic components for globally renowned brands, Shenzhen Mingjiada Electronics Co., Ltd. relies on direct supply channels from original manufacturers and a stock inventory in the millions to provide a long-term, stable supply of the full series of CoolSiC™ and CoolGaN™ MOSFETs specifically designed for server power supplies, supporting R&D selection, small-batch trial production, and mass production delivery.

I. Why Server Power Supplies Must Transition to SiC and GaN

Traditional silicon-based super-junction MOSFETs face two major constraints in server PSUs rated at 3 kW or higher: first, switching losses in high-voltage hard-switching topologies increase sharply as frequency rises; second, the efficiency and EMI trade-offs resulting from the body diode’s reverse recovery current cannot be fully mitigated through circuit design alone. The value of wide-bandgap devices lies in their ability to alter the loss structure at the material level: SiC has a critical breakdown field strength approximately 10 times that of silicon, while GaN features zero reverse recovery charge and extremely low output charge, making MHz-level switching frequencies engineering-feasible in server power supplies.

Market data confirms this trend. By 2025, the combined adoption rate of SiC and GaN in the high-end server power supply market will reach approximately 30%, and is projected to rise further to 40% by 2026. In terms of device allocation, SiC is the preferred choice for high-power training server power supplies, while GaN complements them in small- and medium-power inference power supplies. The two are not substitutes for one another but rather fulfill distinct roles based on topology and power rating.

II. Infineon CoolSiC™ MOSFETs: The Efficiency Benchmark for the High-Side and PFC Stages of Server PSUs

Infineon’s CoolSiC™ 650V discrete devices are specifically designed for server SMPS applications. The second-generation (G2) products, optimized for output capacitance and switching losses, enable PSUs for 3 kW to 12 kW servers and AI applications to achieve a power density of up to approximately 100 W/in³ and an overall efficiency of about 97.5% at full load, while reducing the BOM.

In terms of topology, CoolSiC™ primarily handles the high-voltage switching tasks in server PSUs where losses are most concentrated:

Totem-Pole PFC Fast Arm: 650V CoolSiC™ MOSFETs are used in the high-frequency bridge arm of an interleaved totem-pole PFC to handle high-frequency switching and power factor correction; the slow arm can be paired with 600V CoolMOS™ super-junction MOSFETs to balance cost and performance.

Vienna Rectifier Back-to-Back Switching (Second-Generation Three-Phase PSUs): 650V CoolSiC™ is used for the back-to-back switching in the Vienna rectifier, while 1200V CoolSiC™ diodes are used in the input bridge arms; advanced T-topology solutions employ 1200V CoolSiC™ MOSFETs.

LLC Stage and Synchronous Rectification: 1200V CoolSiC™ MOSFETs are used for the LLC interleaved parallel primary side and for secondary-side synchronous rectification in 800V output architectures.

Selected Key Models of CoolSiC™ Server Power Supplies Stocked by Mingjiada Electronics (Partial List):

650V CoolSiC™: IMZA65R072M1H

650V CoolSiC™ G2: IMLT65R075M2H

750V CoolSiC™ G2: IMBG75R007M2H, IMBG75R011M2H, IMBG75R016M2H, IMBG75R025M2H, etc.

1200V CoolSiC™ G2: On-resistance 7 mΩ–78 mΩ series

Mingjiada Electronics provides both stock and order-based support for the above series. Commonly used models can be delivered within 48 hours through a coordinated inventory system linking warehouses in Shenzhen and Hong Kong, alleviating the lead time pressures commonly encountered during the prototype and mass production ramp-up phases of server power supply projects.

III. Infineon CoolGaN™: A Key Enabler for High-Frequency LLC and High-Density DC-DC Converters in Server PSUs

If SiC addresses the challenge of “reducing losses under high voltage and high power,” GaN addresses the challenge of “increasing frequency within a limited volume.” CoolGaN™’s zero reverse recovery charge and low gate/output charge characteristics give it advantages in the DC-DC stage and bidirectional switching scenarios of server PSUs that silicon devices and some SiC solutions struggle to match.

In Infineon’s server PSU reference architecture, the role of CoolGaN™ is very clear:

Full-bridge LLC in the DC-DC stage: The DC-DC stage of first-generation AI PSUs can optionally use 650V CoolGaN™ transistors to form a full-bridge LLC, leveraging GaN’s high-frequency capabilities to reduce the size of transformers and magnetic components and increase power density.

8 kW High-Density PSU: The Infineon REF-8KW-HFHD-PSU evaluation board integrates CoolGaN™, CoolSiC™, and CoolMOS™ into a single design, with CoolGaN™ serving as the core switching element in the high-frequency LLC topology.

Bidirectional Switching and Vienna/H4 PFC: The 650V CoolGaN™ bidirectional switch replaces two traditional switches with a single device, reducing the number of components and lowering overall losses, and meets the high-frequency requirements of Vienna rectifiers and high-density PFC architectures in server power supplies.

Common CoolGaN™ models used in Mingjiada Electronics’ server power supplies include:

650V CoolGaN™ G5 Series: Designed for server SMPS and high-density DC-DC converters, featuring ultra-fast switching speeds and low gate charge.

600V CoolGaN™ e-mode Series (e.g., IGLD60R190D1): Suitable for totem-pole PFC and high-frequency LLC applications; when paired with EiceDRIVER™ gate drivers, it forms a complete high-frequency switching solution.

CoolGaN™ Bidirectional Switch (BDS): Used in server power supply topologies requiring bidirectional switching capability, such as Vienna rectifiers and H4 PFC, simplifying design and reducing conduction losses with a single-device solution.

For server power supply teams transitioning from silicon-based solutions to wide-bandgap technology, Mingjiada Electronics also supplies the corresponding EiceDRIVER™ gate drivers and XDP™ digital power controllers, reducing the risk of lead time mismatches associated with sourcing multiple types of components from different suppliers.

IV. Why Server Power Supply Projects Choose Mingjiada Electronics to Supply Infineon SiC/GaN

Genuine, in-stock products with traceable batch numbers. As an officially authorized partner of Infineon, Mingjiada Electronics sources all CoolSiC™ and CoolGaN™ devices through authorized channels, providing complete batch traceability codes to prevent refurbished or counterfeit devices from entering server power supply BOMs. For 80 PLUS Titanium certification and long-term reliability validation, consistency and traceability of component sourcing are non-negotiable prerequisites.

Comprehensive coverage of server power supply part numbers. Mingjiada Electronics maintains a stock of over 2 million SKUs, with Infineon MOSFETs covering the full range of server power supply device categories, including CoolSiC™, CoolGaN™, CoolMOS™, and OptiMOS™. From 650V/750V/1200V CoolSiC™ for the PFC stage, to 650V CoolGaN™ and 80V OptiMOS™ for the DC-DC stage, all the way to drivers and controllers, we can provide a complete solution within a single supply window, reducing the coordination costs associated with multiple suppliers during the R&D phase.

Dual-warehouse stock and rapid delivery. Our dual warehousing centers in Shenzhen and Hong Kong maintain stock of commonly used SiC/GaN models for server power supplies. Common part numbers support 48-hour express delivery—approximately 70% shorter than the industry average lead time—providing direct schedule benefits for server power supply projects with tight prototype deadlines and mass production ramp-up phases.

Support ranging from single-unit sales to volume production price locks. During the R&D validation phase, we support sales starting at a single unit, lowering the initial trial-and-error threshold for new SiC/GaN solutions; once annual procurement volume reaches a certain level, customers can enjoy quarterly price lock periods, helping server power supply manufacturers manage BOM costs during a phase when wide-bandgap device prices remain volatile.

Conclusion

The energy efficiency race in server power supplies has shifted from “whether to adopt wide-bandgap technology” to “how to select the right SiC or GaN model for the correct topology.” Infineon’s CoolSiC™ sets the benchmark for efficiency and robustness in high-voltage PFC and 800V architectures, while CoolGaN™ pushes the upper limits of power density in high-frequency LLC and bidirectional switching scenarios; Meanwhile, Mingjiada Electronics ensures the availability of this component portfolio for actual delivery schedules in server power supply projects through authorized channels, genuine off-the-shelf inventory, and rapid delivery capabilities from dual warehouses. Whether it’s the iteration of a 3kW CRPS or the new design of a 12kW–30kW AI PSU, Mingjiada Electronics provides supply support ranging from individual device selection to matching drivers.

Shenzhen Mingjiada Electronics Co., Ltd.

Contact: Mr. Chen

Mobile: +86 13410018555

Landline: +86-755 83294757

Email: sales@hkmjd.com

Address: 1239–1241, New Asia Guoli Building, Zhenzhong Road, Futian District, Shenzhen

Website: www.integrated-ic.com