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商品の詳細:
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| 部品番号: | IKW25N120T2 | 電圧 - コレクターエミッタの分解（最大）: | 1200 v |
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| 現在 - コレクター（IC）（最大）: | 50 a | 現在-脈打つコレクター（Icm）: | 100A |
| パワー - 最大: | 349 W | 転換エネルギー: | 2.9mJ |
| ハイライト: | 1200V IGBT Transistor,25A Integrated Circuit Chip,Anti-Parallel Diode Discrete IGBT |
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IKW25N120T2 Integrated Circuit Chip 1200V 25A IGBT Transistors With Anti-Parallel Diode Product Overview Of IKW25N120T2 IKW25N120T2 is a 1200V, 25A IGBT discrete with anti-parallel diode in TO-247-3 package. This TRENCHSTOP™ IGBT4 device combines trench-cell and fieldstop technology for significant improvements in both static and dynamic performance. The integration with a soft recovery emitter controlled diode further minimizes turn-on losses, achieving optimal efficiency
コンタクトパーソン: Sales Manager
電話番号: 86-13410018555
ファックス: 86-0755-83957753
Japanese
