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商品の詳細:
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| 部品番号: | IXTH200N10T | FETタイプ: | nチャネル |
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| ドレイン・ソース間電圧 (Vdss): | 100V | 電流 - 連続ドレイン (Id) @ 25°C: | 200A(Tc) |
| 入力容量 (Ciss) (最大) @ Vds: | 9400 pF @ 25 V | 電力散逸（最大）: | 550W(Tc) |
| ハイライト: | 100V Power MOSFET,200A N-Channel MOSFET,TO-247-3 Trench Gate MOSFET |
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IXTH200N10T Integrated Circuit Chip 100V 200A N-Channel Trench Gate Power MOSFETs TO-247-3 Product Overview Of IXTH200 The IXTH200N10T is a 100V, 200A N-Channel Enhancement Mode Trench Gate Power MOSFET housed in a TO-247-3 package. It belongs to a series of high-current, low-on-resistance trench-gate power MOSFETs designed for demanding power switching applications, including switch-mode power supplies, motor drives, inverters, DC-DC converters, and welding machines.
コンタクトパーソン: Sales Manager
電話番号: 86-13410018555
ファックス: 86-0755-83957753
Japanese
