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商品の詳細:
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| 部品番号: | IPI80N06S4-07 | ドレイン・ソース間電圧 (Vdss): | 60V |
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| 電流 - 連続ドレイン (Id) @ 25°C: | 80A (Tc) | ゲートチャージ (Qg) (最大) @ Vgs: | 56 NC @ 10ボルト |
| 電力散逸(最大): | 79W (Tc) | 動作温度: | -55°C~175°C (TJ) |
| ハイライト: | 60V Automotive N-Channel MOSFET,80A Power MOSFET Transistor,AEC Q101 Qualified N-Channel MOSFET |
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IPI80N06S4-07 Integrated Circuit Chip OptiMOS™-T2 Power Transistors 60V Automotive N-Channel MOSFETs Product Overview Of IPI80N06 The IPI80N06S4-07 is a 60V, enhancement-mode OptiMOS™-T2 automotive N-channel power MOSFET transistor housed in a PG-TO262-3 package. Engineered for demanding automotive and industrial power applications, it delivers high current capability, low on-resistance, and reliable performance across an extended temperature range. Specifications Of IPI80N06
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