IRF1310NPBF 集積回路チップ 100V HEXFET パワー MOSFET トランジスタ TO-220-3

集積回路の破片
May 26, 2025
カテゴリー接続: 集積回路の破片
Brief: Discover the IRF1310NPBF Integrated Circuit Chip, a 100V HEXFET Power MOSFET Transistor in TO-220-3 package. Ideal for high-power applications, it features advanced process technology, fast switching, and a 175°C operating temperature. Perfect for engineers seeking reliable performance.
Related Product Features:
  • 100V, 42A, 36mOhm HEXFET® N-Channel Power MOSFET in TO-220-3 package.
  • Advanced process technology for superior performance.
  • Dynamic dv/dt rating ensures stability under varying conditions.
  • Operates at temperatures up to 175°C for high-power applications.
  • Fast switching capability enhances efficiency.
  • Fully avalanche rated for robust durability.
  • Lead-free design complies with environmental standards.
  • Suitable for through-hole mounting with a single-channel configuration.
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